| Issue |
E3S Web Conf.
Volume 229, 2021
The 3rd International Conference of Computer Science and Renewable Energies (ICCSRE’2020)
|
|
|---|---|---|
| Article Number | 01056 | |
| Number of page(s) | 4 | |
| DOI | https://doi.org/10.1051/e3sconf/202122901056 | |
| Published online | 25 January 2021 | |
Behaviour of the conductivity in metallic 70 Ge:Ga close to the metal-insulator transition
Multidisciplinary Faculty of Taroudant. Morocco. University Ibn Zohr, Agadir Faculty of Sciences, Agadir 86150, Morocco
* Corresponding author: E-mail address: errai2013@gmail.com
The electrical transport properties in sample 1 of impurity concentration n=xx of the 70Ge: Ga system are studied in the absence of a magnetic field and at low temperature in the range 0.53 to 0.017 K. It is noted that the electrical conductivity of sample 1 exhibits a metallic behavior. We found that the exponent S is equal to 0.5 (σ=σ(T=0)+mTs). This result is in agreement with the theory of weak localization (WL) at 3D and the theory of electronelectron interactions (EEI). We also found that sample 1 is located near the metal-insulator transition (MIT) of the metallic side.
Key words: 70Ge: Ga semiconductor / low temperature / impurity concentration / electron-electron interactions / weak localization / transport properties.
© The Authors, published by EDP Sciences, 2021
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