| Issue |
E3S Web of Conf.
Volume 389, 2023
Ural Environmental Science Forum “Sustainable Development of Industrial Region” (UESF-2023)
|
|
|---|---|---|
| Article Number | 07016 | |
| Number of page(s) | 6 | |
| Section | IT in Environmental Science | |
| DOI | https://doi.org/10.1051/e3sconf/202338907016 | |
| Published online | 31 May 2023 | |
Sensitivity to pressure and light of a depletion-mode field-effect transistor
Bukhara State University, 11- Mukhammad Ikbal St., Bukhara, 200117, Uzbekistan
* Corresponding author: a.a.turaev@buxdu.uz
There are presented the results of experimental investigation of sensitivity of field effect transistor in two-terminal connection mode with pinched-off channel to the impact of pressure and light. It is shown that the depletion-mode field effect transistor has a high sensitivity to pressure and light.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.