Article citations

Download citation

Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

S.B. Donaev, G.M. Shirinov, S. Ergasheva, A.M. Rakhimov, Shenghao Wang and A.A. Abduvayitov

E3S Web Conf., 383 (2023) 04041

DOI: https://doi.org/10.1051/e3sconf/202338304041

Back to the article