| Issue |
E3S Web Conf.
Volume 161, 2020
International Conference on Efficient Production and Processing (ICEPP-2020)
|
|
|---|---|---|
| Article Number | 01107 | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.1051/e3sconf/202016101107 | |
| Published online | 15 April 2020 | |
Peculiarities of admittance spectroscopy study of wide bandgap semiconductors on the example of diamond
1 St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg, Russia
2 Peter the Great Saint-Petersburg, Polytechnic University, Polytechnicheskaya 29, 194064, Russian Federation
* Corresponding author: lukashkinv@gmail.com
To improve the performance characteristics of power and high-frequency electronics, wide bandgap semiconductors are now widely used. This paper presents consideration of features arising during exploration of electronic characteristics of wide bandgap materials. We use the admittance spectroscopy method for analyzing free carrier concentration and boron-impurity activation energy in semiconductor diamond. The special aspect that should be taken into account while studying wide bandgap materials is incomplete ionization of impurity. In this work we adjust the experimental conditions, basing on the previous experience, in particular reduce signal/noise ratio and reckon with heat capacity of the samples and substrate. As a result we obtained high quality conductance spectra and activation energy of boron impurity in low-doped diamond.
© The Authors, published by EDP Sciences, 2020
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