| Issue |
E3S Web Conf.
Volume 198, 2020
2020 10th Chinese Geosynthetics Conference & International Symposium on Civil Engineering and Geosynthetics (ISCEG 2020)
|
|
|---|---|---|
| Article Number | 01025 | |
| Number of page(s) | 6 | |
| Section | Geosynthetics Applied Design Theory and Method | |
| DOI | https://doi.org/10.1051/e3sconf/202019801025 | |
| Published online | 26 October 2020 | |
The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
Leeds Joint School, Southwest Jiao Tong University, Chengdu, Sichuan, 611756, China
Corresponding E-mail:angela@cas-harbour.org
Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.
© The Authors, published by EDP Sciences 2020
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