Investigation of WBG based Power Converters used in E-Transportation

¹ Application SW Supervisor, Stellantis NV, FCA Technology Centre, 1000 Chrysler Dr, Auburn Hills, Michigan, USA.
² Department of EEE, Gokaraju Rangaraju Institute of Engineering and Technology, Hyderabad, Telangana, India
³ KG Reddy College of Engineering & Technology, Hyderabad, Telangana, India
⁴ Department of Refrigeration and air Conditioning Techniques engineering, College of technical Engineering, The Islamic University, Najaf, Iraq.

^* Corresponding Author: hariprasad.bhupathi@stellantis.com

Abstract

Nowadays, Uses for transportation are evolving in the direction of getting more electrified due to rising fuel costs and environmentally hazardous pollutants due to which The grid’s need for power is increasing dramatically. As the only solution for this is to diminish the power consumption of Electric Vehicles (EV). Enhanced component efficiency can lead to improved electric vehicle performance. Wide band gap (WBG) semiconductors, in particular silicon carbide (SiC) and Gallium Nitride (GaN), are ideal candidates of choice to address the recent growing demand in both high efficiency and great power density converters about electric vehicles. Due to their the capacity to switch at a high frequency, high temperature, high voltage, reduced size and reduced conduction losses makes them superior than Si semi-conductors. WBG devices have some properties which include rapid electron mobility, high breakdown field, and big band gap low on-state resistance and capacitance, lower co-efficient of thermal expansion (CTE) and high stability. This paper includes a study on WBG devices, their properties, and the increased efficiency of power converters i.e DC-DC boost converter and single-phase full bridge inverter using LTSpice simulation tool.