Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

¹ Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
² “Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, Uzbekistan
³ Research Institute of Semiconductor Physics and Microelectronics under the National University of Uzbekistan, Tashkent, Uzbekistan
⁴ “FOTON” Joint Stock Company, Tashkent, Uzbekistan

Abstract

In p-n-junction temperature sensors connected in the forwardbiased, the temperature dependence of the built-in potential is important, while in the reverse biased p-n-junction temperature sensors, it is necessary to study the temperature dependence of the built-in potential and space-charge region width.For this case, as well as for homogeneous and gradient alloyed cases, the temperature dependence of built-in potential and space-charge region widthare studied and mathematical analysis is presented for these cases.Based on these mathematical analysis, the results are obtained for cases where the base region of p-n-junction temperature sensors is doped at different concentrations with a homogeneous or inhomogeneous distributions of impurities. It is well known that in conventional temperature sensors, when the main current transport mechanism is determined by generation-recombination processes in space charge region, the dependence of the space charge region width on the temperature can affect the linearity of temperature response curve of sensor, it is desirable to increase the doping rate of the base region to weaken this effect, or it is necessary to use p-n junction.