Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate

¹ NRU “Tashkent Institute of Irrigation and Agricultural Mechanization Engineers”, Kori Niyoziy str., 100000 Tashkent, Uzbekistan
² Akfa University, Milliy Bog Street 264, 111221 Tashkent, Uzbekistan
³ Tashkent State University of Economics, Islam Karimov Str. 49, 100003 Tashkent, Uzbekistan. E-
⁴ Tashkent State Agrarian University, University street, 2, Tashkent 100140, Uzbekistan
⁵ Tashkent State Transport University, Adilkhodjaeva street, 1, 100067 Tashkent, Uzbekistan
⁶ Kokand Branch of Tashkent State Technical University, Street U.Nasir, 4, Kokand, Uzbekistan
⁷ Scientific Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100174 Tashkent, Uzbekistan

^* Corresponding author: mohim@inbox.ru

Abstract

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated.