Issue |
E3S Web Conf.
Volume 583, 2024
Innovative Technologies for Environmental Science and Energetics (ITESE-2024)
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|
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Article Number | 04006 | |
Number of page(s) | 10 | |
Section | Microwave, Laser, RF, UV and Solar Radiations | |
DOI | https://doi.org/10.1051/e3sconf/202458304006 | |
Published online | 25 October 2024 |
Study of a solar cell with a silicon-based photodiode structure
1 Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan
2 Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”, Tashkent, Uzbekistan
* Corresponding author: samusu@rambler.ru
This article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers. The results of studies aimed at creating Au-nCdS-nSi- pCdTe-Au photodiode structures for the spectral range of 1.0-1.4 microns with an area of 29 mm2, which were obtained by vacuum evaporation in a quasi-closed volume of sputtering layers of cadmium sulfide and cadmium telluride, are presented. onto a silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au - nCdS-nSi - pCdTe - Au structures are two-way sensitive and have a low capacitance value of C = 23.3 pF at room temperature.
© The Authors, published by EDP Sciences, 2024
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