E3S Web Conf.
Volume 16, 201711th European Space Power Conference
|Number of page(s)||5|
|Section||Power Management & Distribution: Wide Bandgap Components|
|Published online||23 May 2017|
Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications
1 School of Engineering, University of Warwick, Coventry, CV4 7AL, UK
2 Tyndall National Institute at National University of Ireland, Cork, Prospect Row, Ireland
3 Cambridge Microelectronics Limited, Cambridge, United Kingdom
4 Universite Catholique de Louvain, Louvain-la-Neuve, Belgium
A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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