| Issue |
E3S Web Conf.
Volume 53, 2018
2018 3rd International Conference on Advances in Energy and Environment Research (ICAEER 2018)
|
|
|---|---|---|
| Article Number | 01035 | |
| Number of page(s) | 4 | |
| Section | Energy Engineering, Materials and Technology | |
| DOI | https://doi.org/10.1051/e3sconf/20185301035 | |
| Published online | 14 September 2018 | |
Highly compact CsPbBr3 perovskite film decorated by PEO for light-emitting diodes
East China University of Science and technology, 200237, shanghai, China
Inorganic perovskite light-emitting diodes (PeLEDs) with full coverage and compact films were realized by doping a certain amount of PEO into perovskite emitting layer. The additive PEO (Polyethylene oxide) can not only improve the coverage of films by physically filling the pin-holes of crystal boundaries but also act as a protective layer to passivate the films, which successfully reduce the rate of non-radiative recombination, and enhance photoluminescence quantum yield (PLQY) of the CsPbBr3 films. In addition, PEO can also decrease the surface roughness of the perovskite films. As a result, the addition of PEO can improve the transport capability of carriers in PeLEDs. By optimizing the concentration of PEO, a maximum external quantum efficiency (EQE) of 0.26% and brightness of 1432 cd/m2 were achieved, which is significantly improved compared with previous work. The results presented in this paper shows that the additive PEO in perovskite precursor solution paves a new way for the application in PeLEDs.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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