E3S Web Conf.
Volume 88, 2019i-DUST 2018 – Inter-Disciplinary Underground Science & Technology
|Number of page(s)||8|
|Section||Microelectronics Devices and Systems|
|Published online||22 February 2019|
A global modeling approach of the leakage phenomena in dielectrics
Aix-Marseille University, IM2NP, CNRS, UMR 7334, rue Enrico Fermi, 13451 Marseille, France
2 Avignon University, EMMAH, UMR 1114, INRA-UAPV, 301 rue Baruch de Spinoza, 84000 Avignon, France
3 LSBB, UMS 3538, UNS/UAPV/CNRS/AMU, La Grande Combe, 84400 Rustrel, France
* e-mail: email@example.com
Thanks to its low noise level, the LSBB environment provides particular environment to carry out high quality electrical characterizations. In this paper, we propose a complete modeling approach of the experimental results from our experimental microelectronic setup. The tested device is a Metal Oxide Semiconductor (MOS) floating gate capacitor which can be found in electrostatic non volatile memories such as Flash. The main idea is to characterize and model the leakage current through the tunnel oxide. We proposed, in a previous work, a model for charge loss considering a fractional Poisson process, involving only two parameters, expressed as a Mittag-Leffler (ML) function. Here, we also propose a combo of Fowler-Nordheim (FN) and Poole-Frenkel (PF) models for leakage currents, based on tunnel effect transport through the oxide. It gives the leakage current on a medium-to-long scale of time while the ML model can possibly take into account a shorter time step. The perspective is to find a relationship between these different models, used in various fields, to propose a generic model of phenomena involving leakage in complex and porous materials at different scales of time and space.
© The Authors, published by EDP Sciences, 2019
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