Issue |
E3S Web Conf.
Volume 183, 2020
International Conference on Climate Nexus Perspectives: Water, Food and Biodiversity (I2CNP 2020)
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Article Number | 05002 | |
Number of page(s) | 8 | |
Section | Natural and Applied Sciences Based Solutions to Environmental Issues | |
DOI | https://doi.org/10.1051/e3sconf/202018305002 | |
Published online | 03 August 2020 |
Synthesis of N-CNT/TiO2 composites thin films: surface analysis and optoelectronic properties
1
Laboratory of Engineering and Applied Technologies, Higher School of Technology, Sultan Moulay Slimane University, Beni Mellal, Morocco
2
Laboratory of Materials, Nanotechnologies and Environment, Department of Chemistry, Faculty of Sciences, University of Mohammed V, Rabat, Morocco
3
Molecular Electrochemistry and Inorganic Materials Team, Faculty of Science and Technology, Sultan Moulay Slimane University, Beni Mellal, Morocco
4
Department of Chemistry, Faculty of Sciences, University of Mohammed V, Rabat, Morocco
* Corresponding author: ziat.estbm@gmail.com
** mar.hammi@yahoo.com
In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.
© The Authors, published by EDP Sciences, 2020
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