| Issue |
E3S Web Conf.
Volume 185, 2020
2020 International Conference on Energy, Environment and Bioengineering (ICEEB 2020)
|
|
|---|---|---|
| Article Number | 04071 | |
| Number of page(s) | 4 | |
| Section | Chemical Engineering and Food Biotechnology | |
| DOI | https://doi.org/10.1051/e3sconf/202018504071 | |
| Published online | 01 September 2020 | |
Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor
1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen China
2 TCL China Star Optoelectronics Technology Co., LTD., Shenzhen China
* Corresponding author: zhangsd@pku.edu.cn
Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.
© The Authors, published by EDP Sciences, 2020
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