Issue |
E3S Web Conf.
Volume 185, 2020
2020 International Conference on Energy, Environment and Bioengineering (ICEEB 2020)
|
|
---|---|---|
Article Number | 04071 | |
Number of page(s) | 4 | |
Section | Chemical Engineering and Food Biotechnology | |
DOI | https://doi.org/10.1051/e3sconf/202018504071 | |
Published online | 01 September 2020 |
Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor
1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen China
2 TCL China Star Optoelectronics Technology Co., LTD., Shenzhen China
* Corresponding author: zhangsd@pku.edu.cn
Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.