A Strategy for High-Performance Photodetector based on Graphene-Si heterostructure

¹ State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
² School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
³ Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

^* cylan@uestc.edu.cn

Abstract

Van der Waals heterostructure shows promising applications in next generation optoelectronics. As a kind of van der Waals heterostructure, graphene/silicon (Gr/Si) based heterostructure devices have been demonstrated as high performance photodetectors. Here, we studied the origin of the high performance of Gr/Si photodetectors based on photocurrent mapping technology. According to photocurrent mapping, the photocurrent in the Gr/Si and Gr/SiO₂/Si area nearing the Si window edge is higher than that in other positions, which is attributed to the highly effective collection efficiency of photocarriers. A device with size of Gr/Si region (r=7.4 μm) and Gr/SiO₂/Si region (L=6.1 μm) shows high sensitivity and a broadband photoresponse in the range from 420 to 1000 nm with the peak sensitivity of 52 A/W at 780 nm, and fast response speed with rise time of 16 μs and decay time of 52 μs. Our study provides a strategy for the design of high photoresponsivity Gr/Si based devices.