E3S Web Conf.
Volume 213, 20202nd International Conference on Applied Chemistry and Industrial Catalysis (ACIC 2020)
|Number of page(s)||4|
|Section||Energy Mining Research and Composite Material Performance Analysis|
|Published online||01 December 2020|
A Strategy for High-Performance Photodetector based on Graphene-Si heterostructure
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Van der Waals heterostructure shows promising applications in next generation optoelectronics. As a kind of van der Waals heterostructure, graphene/silicon (Gr/Si) based heterostructure devices have been demonstrated as high performance photodetectors. Here, we studied the origin of the high performance of Gr/Si photodetectors based on photocurrent mapping technology. According to photocurrent mapping, the photocurrent in the Gr/Si and Gr/SiO2/Si area nearing the Si window edge is higher than that in other positions, which is attributed to the highly effective collection efficiency of photocarriers. A device with size of Gr/Si region (r=7.4 μm) and Gr/SiO2/Si region (L=6.1 μm) shows high sensitivity and a broadband photoresponse in the range from 420 to 1000 nm with the peak sensitivity of 52 A/W at 780 nm, and fast response speed with rise time of 16 μs and decay time of 52 μs. Our study provides a strategy for the design of high photoresponsivity Gr/Si based devices.
© The Authors, published by EDP Sciences, 2020
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