E3S Web Conf.
Volume 245, 20212021 5th International Conference on Advances in Energy, Environment and Chemical Science (AEECS 2021)
|Number of page(s)||4|
|Section||Chemical Performance Research and Chemical Industry Technology Research and Development|
|Published online||24 March 2021|
Regulation of hole transport layer for perovskite quantum dot light-emitting diodes
1 School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, P. R. China
2 National University of Singapore Suzhou Research Institute Dushu Lake Science and Education Innovation District Suzhou 215123, P. R. China
* Corresponding author: email@example.com
Perovskite quantum dots have been widely used in light-emitting diodes (LEDs) because of their adjustable color, high quantum yield and easy solution processing. Furthermore, matching energy levels of device plays a profound role in the resultant LEDs. In this study, a polymeric material, namely poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-(pbutylphenyl))diphenylamine)] (TFB), is introduced between the quantum dot emission layer and the hole injection layer PEDOT:PSS, which not only prevents the fluorescence quenching caused by the direct contact between the perovskite layer and the hole injection layer, but also reduces hole injection barrier, both being beneficial to the device performance. The optimal thickness of TFB has been obtained by adjusting the rotational speed and precursor solution concentration during spin coating. The optimized quantum dots LED has a switching on voltage of about 2.2 V, a maximum brightness of 4300 cd/m2, a maximum external quantum efficiency of 0.15%, and a maximum current density of 0.54 cd/A.
© The Authors, published by EDP Sciences, 2021
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