Issue |
E3S Web Conf.
Volume 461, 2023
Rudenko International Conference “Methodological Problems in Reliability Study of Large Energy Systems“ (RSES 2023)
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Article Number | 01070 | |
Number of page(s) | 4 | |
DOI | https://doi.org/10.1051/e3sconf/202346101070 | |
Published online | 12 December 2023 |
Photoelectric characteristics of Si-photocetitors
Tashkent State Technical University named after Islam Karimov, 100095, Uzbekistan, Tashkent, University St. 2A
* Corresponding author: raxmatillo82@mail.ru
The work examines the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-n-p receivers of electromagnetic radiation. It has been established that ultrasonic irradiation increases the lifetime and diffusion length of carriers and, as a consequence, increases the efficiency of carrier collection at the electrical contacts of Si-n-p receivers. As a result of these processes, an increase in the short-circuit current is observed, which causes an increase in the open-circuit voltage of the Si-n-p structure operating in the photoconversion mode.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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