| Issue |
E3S Web Conf.
Volume 578, 2024
XL Siberian Thermophysical Seminar (STS-40)
|
|
|---|---|---|
| Article Number | 01020 | |
| Number of page(s) | 6 | |
| DOI | https://doi.org/10.1051/e3sconf/202457801020 | |
| Published online | 14 October 2024 | |
Study of a-Si/Al thickness on aluminum-induced crystallization
Kutateladze Institute of Thermophysics SB RAS, Novosibirsk 630090, Russia
In this work, the effect of the a-Si/Al ratio on the poly-Si obtained as a result of aluminium-induced crystallization (AIC) of amorphous silicon a-Si at an annealing temperature of 490 °C has been studied. The dendritic shape of the resulting crystal structures suggests a growth model described by diffusion-limited aggregation. The degree of coverage is slightly dependent on the initial ratio of amorphous silicon to aluminium and ranges from 15% to 25%. This is probably explained by the higher rate of secondary crystallization in the upper layer compared to the lower layer. The maximum average crystallite size is reached at a ratio of 0.9 and is 2.7 µm.
© The Authors, published by EDP Sciences, 2024
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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