Issue |
E3S Web Conf.
Volume 496, 2024
International Conference on Energy, Infrastructure and Environmental Research (EIER 2024)
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Article Number | 02001 | |
Number of page(s) | 4 | |
Section | Engineering Physics and Computational Technologies | |
DOI | https://doi.org/10.1051/e3sconf/202449602001 | |
Published online | 12 March 2024 |
Solution-processed PEDOT: PSS/PVA polymer blend write-once-read-many memory devices
Institute of Applied Mechanics and Informatics, Vietnam Academy of Sciences and Technology, 1 Mac Dinh Chi, Ho Chi Minh City, Vietnam
* Email: nvcuong@hcmip.vast.vn
In this work, all-solution-processed resistive switching memory devices in a polymer blend are realised. The memory, in this work, is Write-Once-Read-Many memory (WORM). The polymer blend is the blend of Poly(3,4-ethylenedioxythiophene) Polystyrene Sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA). The devices can sustain 50 bending cycles at a bending radius of 0.5mm, while still able to maintain and perform memory functions. The mechanism of the switching can be attributed to electrochemical properties of the polymers. The migrations of polymers (PEDOT: PSS/PVA blend) and electrolysis of the absorbed water distort the conducting pathways and switch the state of the device from a low resistance state (LRS) to a high resistance state (HRS). The work may pave the way for future low cost flexible electronic memory devices. Flexible memory devices
Key words: Flexible memory devices / conducting polymers
© The Authors, published by EDP Sciences, 2024
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