Effect of Deposition Conditions on Oxide Parameters of Silicon

Souad Merabet; Ahlem Alioua; Bilal Djellil

doi:10.1051/e3sconf/202122901037

All issues

Volume 229 (2021)

E3S Web Conf., 229 (2021) 01037

References

Open Access

Issue		E3S Web Conf. Volume 229, 2021 The 3^rd International Conference of Computer Science and Renewable Energies (ICCSRE’2020)


Article Number		01037
Number of page(s)		5
DOI		https://doi.org/10.1051/e3sconf/202122901037
Published online		25 January 2021

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[1] Gerlach, G., Maser, K., 2016. A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness, Advances in condensed matter Physics, Article ID 7545632 [Google Scholar]

[2] Lojek, B., 2005. Historiy of semiconductor Engineering, Springer, Berlin, Germany [Google Scholar]

[3] Sandor, D., Fulton, S., Engel-Cox, J., Peck, C., and Peterson, S., 2018. System Dynamics of Polysilicon for Solar Photovoltaics: A Framework for Investigating the Energy Security of Renewable Energy Supply Chains, Sustainability 10(1), 160 [CrossRef] [Google Scholar]

[4] Yun, J., Huang, J., Teal, A., Kin, K., Varlamov, S., and Green, M. A., 2016. Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser, Thin Solid Films, 609 pp.12-18. [CrossRef] [Google Scholar]

[5] Fukuda, H., 1997. Growth kinetics of nanoscale SiO₂ layer in a nitric oxide (NO) ambient, Applied Surface Science, 113-114 pp.595-599. [CrossRef] [Google Scholar]

[6] Hashim, U., et al, 2015. Comparison of Deal Grove Model growth rate with Dry thermal oxidation process for ultra-thin Silicon Dioxide film, Conference paper, doi: 10.1109/COBE.2015 [Google Scholar]

[7] Kovacevic, G., Pivac, B., 2014. Structure, defects, and strain in silicon-silicon oxide interface, J. Applied Physics, Vol. 115, n°4, Article ID 043531 [CrossRef] [Google Scholar]

[8] Hemeryck, A., 2008. Modélisation à l’échelle atomique des premiers stades de l’oxydation du silicium : Théorie de la Fonctionnelle de la Densité et Monte Carlo cinétique, Doctorate thesis, Université Toulouse III – Paul Sabatier [Google Scholar]

[9] Fabien, R., 2018. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies, Doctorate thesis, Université de Grenoble Alpes [Google Scholar]

[10] Fukuda, H., Yasuda, M., and Iwabuchi, T., 1992. Kinetics of Rapid Thermal Oxidation of Silicon, Journal of Appl. Phys. Vol. 31 pp.3436-3439 [CrossRef] [Google Scholar]

[11] Lemiti, M., Audisio, S., Mai, C., Balland, B., 1989. Evolution de la taille des grains du silicium polycristallin pendant des traitements thermiques ou oxydation, Revue Phys. Appl. 24 pp.133-141 [CrossRef] [Google Scholar]

[12] Guan, B., et al., 2015. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers, Scientific Reports | 5:12641 | doi: 10.1038/srep12641 [Google Scholar]

[13] Boukezzata, M., Birouk, B., Mansour, F., Bielle-Daspet D., 1997. Structural and electrical changes in polycrystalline silicon thin films that are heavily in situ boron-doped and thermally oxidation with dry oxygen, Chem. Vap. Deposition Vol. 3, n°5, pp.271-279 [CrossRef] [Google Scholar]