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Cited article:

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Rosine Coq Germanicus, Florent Lallemand, Daniel Chateigner, et al.
Nano Express 2 (1) 010037 (2021)
https://doi.org/10.1088/2632-959X/abed3e