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Cited article:

Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

K. Ben Saddik, S. Fernández-Garrido, R. Volkov, J. Grandal, N. Borgardt and B. J. García
Journal of Applied Physics 134 (17) (2023)
https://doi.org/10.1063/5.0173748

Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions

Riku Isoaho, Antti Tukiainen, Juuso Puutio, Arttu Hietalahti, Jarno Reuna, Antti Fihlman, Elina Anttola, Miika Keränen, Arto Aho and Mircea Guina
Solar Energy Materials and Solar Cells 248 111987 (2022)
https://doi.org/10.1016/j.solmat.2022.111987

Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

Riku Isoaho, Arto Aho, Antti Tukiainen, Timo Aho, Marianna Raappana, Turkka Salminen, Jarno Reuna and Mircea Guina
Solar Energy Materials and Solar Cells 195 198 (2019)
https://doi.org/10.1016/j.solmat.2019.02.030

Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

Arto Aho, Riku Isoaho, Antti Tukiainen, Gabriele Gori, Roberta Campesato and Mircea Guina
Progress in Photovoltaics: Research and Applications 26 (9) 740 (2018)
https://doi.org/10.1002/pip.3011