E3S Web Conf.
Volume 16, 201711th European Space Power Conference
|Number of page(s)||3|
|Section||Power Generation: Solar Cells|
|Published online||23 May 2017|
Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE
Tampere University of Technology, Optoelectronics Research Centre, Korkeakoulunkatu 3, 33720 Tampere, Finland
Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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