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Cited article:

Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

I. B. Sapaev, B. Sapaev, S. Sadullaev, J. Sh. Abdullayev, A. V. Umarov, R. U. Siddikov, A. A. Mamasoliev, K. S. Daliev

E3S Web Conf., 413 (2023) 04008

Published online: 2023-08-11

DOI: https://doi.org/10.1051/e3sconf/202341304008

This article has been cited by the following article(s):

Capacitance-voltage characteristics and electrostatic field distribution in CdTe/Si heterojunctions: temperature dependence and theoretical modeling

Ibrokhim B Sapaev and Sadulla O Sadullaev
Materials Research Express 12 (5) 055903 (2025)
https://doi.org/10.1088/2053-1591/add088

Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

Sadula O. Sadullaev, Ibrokhim B. Sapaev and Khidoyat E. Abdikarimov
East European Journal of Physics (1) 211 (2025)
https://doi.org/10.26565/2312-4334-2025-1-22

Intense pulsed light annealing of CdS and Au-decorated CdS nanoparticles for high-performance, self-powered silicon-based heterojunction photodetectors

Hadeel F. Abbas, Raid A. Ismail, Walid K. Hamoudi and Mayyadah H. Mohsin
RSC Advances 15 (28) 22989 (2025)
https://doi.org/10.1039/D5RA04075B