Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

¹ National Research University TIIAME, Kori Niyoziy str., 100000 Tashkent, Uzbekistan
² Akfa University, Milliy Bog Street 264, 111221 Tashkent, Uzbekistan
³ Tashkent State Agrarian University, University street, 2, Tashkent 100140, Uzbekistan
⁴ Tashkent State Transport University. Adilkhodjaeva street, 1, 100067 Tashkent, Uzbekistan
⁵ Kokand Branch of Tashkent State Technical University, Street U.Nasir, 4, Kokand, Uzbekistan
⁶ Scientific Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100174 Tashkent, Uzbekistan

^* Corresponding author: mohim@inbox.ru

Abstract

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.