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Cited article:

Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate

I. B. Sapaev, S. Sadullaev, D. Babajanov, B. Sapaev, A. V. Umarov, Sh. Y. Pulatov, O. O. Meliziaev, K. S. Daliev

E3S Web Conf., 413 (2023) 04009

Published online: 2023-08-11

DOI: https://doi.org/10.1051/e3sconf/202341304009

This article has been cited by the following article(s):

Capacitance-voltage characteristics and electrostatic field distribution in CdTe/Si heterojunctions: temperature dependence and theoretical modeling

Ibrokhim B Sapaev and Sadulla O Sadullaev
Materials Research Express 12 (5) 055903 (2025)
https://doi.org/10.1088/2053-1591/add088

Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

Sadula O. Sadullaev, Ibrokhim B. Sapaev and Khidoyat E. Abdikarimov
East European Journal of Physics (1) 211 (2025)
https://doi.org/10.26565/2312-4334-2025-1-22