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Cited article:

Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

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Journal of Applied Physics 134 (17) (2023)

Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions

Riku Isoaho, Antti Tukiainen, Juuso Puutio, et al.
Solar Energy Materials and Solar Cells 248 111987 (2022)

Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

Riku Isoaho, Arto Aho, Antti Tukiainen, et al.
Solar Energy Materials and Solar Cells 195 198 (2019)

Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

Arto Aho, Riku Isoaho, Antti Tukiainen, Gabriele Gori, Roberta Campesato and Mircea Guina
Progress in Photovoltaics: Research and Applications 26 (9) 740 (2018)