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Cited article:

Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

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Journal of Applied Physics 134 (17) (2023)
https://doi.org/10.1063/5.0173748

Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions

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Solar Energy Materials and Solar Cells 248 111987 (2022)
https://doi.org/10.1016/j.solmat.2022.111987

Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

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Solar Energy Materials and Solar Cells 195 198 (2019)
https://doi.org/10.1016/j.solmat.2019.02.030

Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

Arto Aho, Riku Isoaho, Antti Tukiainen, Gabriele Gori, Roberta Campesato and Mircea Guina
Progress in Photovoltaics: Research and Applications 26 (9) 740 (2018)
https://doi.org/10.1002/pip.3011