| Issue |
E3S Web Conf.
Volume 16, 2017
11th European Space Power Conference
|
|
|---|---|---|
| Article Number | 03003 | |
| Number of page(s) | 5 | |
| Section | Power Generation: Solar Cells | |
| DOI | https://doi.org/10.1051/e3sconf/20171603003 | |
| Published online | 23 May 2017 | |
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
1 CESI S.p.A., Via Rubattino 54, 20134 Milan, Italy
2 Tampere University of Technology, Optoelectronics Research Centre, PO Box 692, FI-33101 Tampere, Finland
mail: campesato@cesi.it
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.
© The Authors, published by EDP Sciences, 2017
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