E3S Web Conf.
Volume 16, 201711th European Space Power Conference
|Number of page(s)||5|
|Section||Power Generation: Solar Cells|
|Published online||23 May 2017|
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
1 CESI S.p.A., Via Rubattino 54, 20134 Milan, Italy
2 Tampere University of Technology, Optoelectronics Research Centre, PO Box 692, FI-33101 Tampere, Finland
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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