| Issue |
E3S Web Conf.
Volume 16, 2017
11th European Space Power Conference
|
|
|---|---|---|
| Article Number | 02005 | |
| Number of page(s) | 3 | |
| Section | Power Generation: Solar Cells & Generators Testing | |
| DOI | https://doi.org/10.1051/e3sconf/20171602005 | |
| Published online | 23 May 2017 | |
Subcell Light Current-Voltage Characterization of Irradiated Multijunction Solar Cell
The Aerospace Corporation, 2310 E. El Segundo Blvd., El Segundo, CA 90245, U.S.A
Email: don.walker@aero.org
The degradation of individual subcell J-V parameters, such as short circuit current, open circuit voltage, fill factor, and power of a GaInP/GaInAs/Ge triple junction solar cell by 1 MeV electrons were derived utilizing the spectral reciprocity relation between electroluminescence and external quantum efficiency. After exposure to a fluence of 1 × 1015 1 MeV electrons, it was observed that up to 67% of the voltage loss is from the middle, GaInAs subcell. Also, the dark saturation current of the Ge and GaInAs subcells increased but a simultaneous decrease in ideality factor caused a reduction of the open circuit voltage. The reduced ideality factor further indicates a change in the primary recombination mechanism.
© The Authors, published by EDP Sciences, 2017
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