E3S Web Conf.
Volume 16, 201711th European Space Power Conference
|Number of page(s)||5|
|Section||Power Management & Distribution: DC/DC Converters|
|Published online||23 May 2017|
Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter
1 Industrial Electronics Group, Miguel Hernández University of Elche (Spain)
2 Laboratory of Industrial Electronics and Instrumentation, University of Valencia (Spain)
This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS) converter. This type of converters is usually used as Electronic Power Converters (EPC) for telecommunication satellites travelling-wave tube amplifiers (TWTAs). In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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