E3S Web Conf.
Volume 16, 201711th European Space Power Conference
|Number of page(s)
|Power Generation Posters
|23 May 2017
Si-Doped InAs/GaAs Quantum Dot Solar Cell with Alas Cap Layers
1 Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
2 Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States of America
* Email: email@example.com
In this work, the effect of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers is studied. The AlAs cap layers suppress the formation of the wetting layer during quantum dot growth. This helps achieve quantum dot state filling, which is one of the requirements for strong sub-bandgap photon absorption in the quantum dot intermediate band solar cell, at lower Si doping density. Furthermore, the passivation of defect states in the quantum dots with moderate Si doping is demonstrated, which leads to an enhancement of the carrier lifetime in the quantum dots, and hence the open-circuit voltage.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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