E3S Web Conf.
Volume 64, 20182018 3rd International Conference on Power and Renewable Energy
|Number of page(s)||5|
|Section||Electrical Theory and New Technology|
|Published online||27 November 2018|
Electric Field Analysis of Press-Pack IGBTs
1 State Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute of State Grid Corporation of China), Beijing 102209, China
2 State Key Laboratory of Alternate Electric Power System with Renewable Energy Sources (North China Electric Power University), Beijing 102206, China
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT. The press-pack IGBTs have such advantages as low inductance, low thermal impedance and short circuit failure mode than the wire-bonded IGBT module, which especially suit for high voltage power transmission application by series connection. However, the electrical insulation failure modes of press-pack IGBTs are much less known with limited literature published. In this paper, we presented the electric field analysis of a 3D press-pack IGBT model under DC rating voltage test condition. The electric field distribution of the press-pack IGBT stack was solved as an electrostatic problem by employing the finite element method. The results revealed the potential electrical insulation failure modes of the press-pack IGBTs: corona discharge at the edge of silver plate, partial discharge at the micro gap between die and PEEK frame and creeping discharge at the surface of PEEK frame.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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