E3S Web Conf.
Volume 191, 20202020 The 3rd International Conference on Renewable Energy and Environment Engineering (REEE 2020)
|Number of page(s)||5|
|Section||Solar and Photovoltaic Systems|
|Published online||24 September 2020|
Effect of solar cell structure on the radiation resistance of an InP solar cell
1 Renewable energies department, Faculty of technology, Blida 1 university, Soumaa road, BP 270 Blida, Algeria
2 SDPL, Faculty of Science and Technology, University of Bechar, BP 417, Kenadsa Road, Bechar, Algeria
3 Université Paris-Est, CERTES, IUT de Sénart-Fontainebleau, 36 rue Georges Charpak, 77567, Lieusaint, France
* Corresponding author: email@example.com
Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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