| Issue |
E3S Web Conf.
Volume 191, 2020
2020 The 3rd International Conference on Renewable Energy and Environment Engineering (REEE 2020)
|
|
|---|---|---|
| Article Number | 01005 | |
| Number of page(s) | 5 | |
| Section | Solar and Photovoltaic Systems | |
| DOI | https://doi.org/10.1051/e3sconf/202019101005 | |
| Published online | 24 September 2020 | |
Effect of solar cell structure on the radiation resistance of an InP solar cell
1 Renewable energies department, Faculty of technology, Blida 1 university, Soumaa road, BP 270 Blida, Algeria
2 SDPL, Faculty of Science and Technology, University of Bechar, BP 417, Kenadsa Road, Bechar, Algeria
3 Université Paris-Est, CERTES, IUT de Sénart-Fontainebleau, 36 rue Georges Charpak, 77567, Lieusaint, France
* Corresponding author: pierre-olivier.logerais@u-pec.fr
Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.
© The Authors, published by EDP Sciences, 2020
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