E3S Web Conf.
Volume 351, 202210th International Conference on Innovation, Modern Applied Science & Environmental Studies (ICIES’2022)
|Number of page(s)||6|
|Published online||24 May 2022|
High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points
1 IASSE Laboratory, University Sidi Mohamed Ben Abdellah Fès, Maroc
2 IMAGE Laboratory, Moulay Ismail1University Meknes, Morocco
3 University Paris-Est, ESYCOM (EA 2552), ESIEE, UPEM, Le Cnam, Noisy-le-Grand, France
4 Le Cnam, ESYCOM (EA2552), Paris, France
This article presents the results of our research on the modeling of an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point of polarization in this work, we were interested in modeling the same HPT on different points of polarization. We will model the HPT to operate at both 2V and 3V, so that we can use the HPT at multiple bias points and reduce costs and allow the reuse of the HPT SiG heterojunction phototransistor on further studies. For a defined point of polarization we will optimize the operation of the HPT so that it flies with the dynamic measurements and we will not base on this HPT by modifying certain values and components so that the HTP works on the other points of polarization.
Key words: HPT heterojunction phototransistor / RoF Radio-over-fiber
© The Authors, published by EDP Sciences, 2022
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.