Issue |
E3S Web Conf.
Volume 383, 2023
International Scientific Conference Transport Technologies in the 21st Century (TT21C-2023) “Actual Problems of Decarbonization of Transport and Power Engineering: Ways of Their Innovative Solution”
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Article Number | 04022 | |
Number of page(s) | 7 | |
Section | Mechanical Engineering and New Energy Technologies | |
DOI | https://doi.org/10.1051/e3sconf/202338304022 | |
Published online | 24 April 2023 |
Influence of the parameters to transition capacitance at NCDS-PSI heterostructure
1
National Research University TIIAME, st. Kori Niyazov, house 39, 100000 Tashkent, Uzbekistan
2
Tashkent State Pedagogical University, Bunyodkor avenue, 27, 100070 Tashkent, Uzbekistan
3
Tashkent State Agrarian University, 2, Universitet st, 100140 Tashkent, Uzbekistan
4
Tashkent State Transport University, pass. 1st Temiryulchilar, 1, 100167 Tashkent, Uzbekistan
5
Kokand Branch of Tashkent State Technical University, Usmon Nosir street 4, Fergana region, Kokand, Uzbekistan
6
Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Yangi Almazar street, house 20, 100057 Tashkent, Uzbekistan
* Corresponding author: mohim@inbox.ru
It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.
© The Authors, published by EDP Sciences, 2023
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