A Comprehensive loss analysis of SiC-based DAB DC-DC converter for electric vehicle application

¹ Research Scholar, EEE Department, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu, India
² Assistant Professor, EEE Department, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu, India

^* Corresponding author: femir@srmist.edu.in

Abstract

This paper presents loss analysis of SiC MOSFET based bidirectional DAB (Dual Active Bridge) DC-DC converter for EV application. This converter benefits the efficiency of the EV vehicle by reducing power loss and voltage drop across the converter. The DAB uses WBG (Wide-Bandgap) semiconductor devices such as SiC MOSFET to optimize the efficiency and extend soft-switching over whole operating range. The SiC MOSFET switching devices rated at 1200 V with different drain- source on-state resistance R_ds(on) of 21 mΩ/32 mΩ is considered. Therefore, a reliable converter rated at 10 kW which works under normal operating condition at high-switching frequency of 100 kHz. The switching and conduction losses are taken under two different junction temperature such as 25 °C and 100 °C with various operating load current between 10 A to 40 A. Based on an analysis of SiC MOSFET based DAB attains 98.8% efficiency. The simulation results are taken as voltage and current waveforms at various points of converter are reported. This SiC based DAB converter would be used in next generation of V2G (Vehicle-to-Grid) and G2V (Grid-to-Vehicle) technology.