Issue |
E3S Web of Conf.
Volume 401, 2023
V International Scientific Conference “Construction Mechanics, Hydraulics and Water Resources Engineering” (CONMECHYDRO - 2023)
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Article Number | 05093 | |
Number of page(s) | 7 | |
Section | Engineering Materials Science, Intelligent Transport Systems and Transport Logistics | |
DOI | https://doi.org/10.1051/e3sconf/202340105093 | |
Published online | 11 July 2023 |
Non-volatile phototransistor based on two dimensional MoTe2 nanostructures
1 Institute of Material Science, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
2 Tashkent State Technical University, Tashkent, Uzbekistan
3 National University of Uzbekistan, Tashkent, Uzbekistan
4 Akfa University, Tashkent, Uzbekistan
5 “Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, Uzbekistan
6 Kunming University of Science and Technology, Kunming, PR China
7 Turin Polytechnic University in Tashkent, Tashkent, Uzbekistan
8 National University of Uzbekistan, Tashkent, Uzbekistan
* Corresponding author: k.saidov@skku.edu
We fabricate field-effect transistors (FETs) from low-layer molybdenum ditelluride (MoTe2) in the nanometer range and study its optoelectronic properties. In particular, we investigate the mechanisms of photocurrent generation in MoTe2 FETs using gate and bias-dependent photocurrent measurements. The results obtained show the photocurrent effects and signals generated in the MoTe2-electrode junctions, which identify the effect of amplifying the photoconductor in the off and on modes. This is different from those conventional MoTe2 FETs, which exhibited a continuous increase in photocurrent with no back gate voltage. These results play an important role in the fabrication of direction dependent field effect transistors based on MoTe2 crystals.
© The Authors, published by EDP Sciences, 2023
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