| Issue |
E3S Web Conf.
Volume 431, 2023
XI International Scientific and Practical Conference Innovative Technologies in Environmental Science and Education (ITSE-2023)
|
|
|---|---|---|
| Article Number | 06035 | |
| Number of page(s) | 8 | |
| Section | Industrial Innovation and Decarbonization | |
| DOI | https://doi.org/10.1051/e3sconf/202343106035 | |
| Published online | 13 October 2023 | |
Piezocapacitance spectroscopy of a radiation defect in silicon
1 Doctor of Physical and Mathematical Sciences, Professor, Department of Physics, Fergana Polytechnic Institute, 150100 Fergana, Uzbekistan
2 Candidate of Physical and Mathematical Sciences, Docent, Department of Physics, Fergana Polytechnic Institute, 150100 Fergana, Uzbekistan
3 Candidate of Physical and Mathematical Sciences, Docent, Department of Technological Education, Fergana State University, 150100 Fergana, Uzbekistan
* Corresponding author: fer.sapedu@gmail.com
In this article, using non-stationary capacitive deep-level spectroscopy (DLTS), the dependence of the parameters of the radiation defect with the ionization energy Ei = Ec − (0.33±0.02) eB arising after irradiation with n − Si · λ - quanta of the 60Co isotope and annealing the samples at 250°C on uniaxial compression was studied. It is shown that, under the action of pressure, Ei ΔEi changes depending on the crystallographic direction and reaches values of 0.06−0.12eB. A comparison is made with a similar effect for the level of the A-centre Ec − 0,17 eB.
© The Authors, published by EDP Sciences, 2023
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