Mathematical models of MOS transistors with induced and ion-doped conditions in energy engineering

¹ Voronezh State Forestry University named after G.F. Morozova, 394036 Voronezh, Russia
² Voronezh State Technical University, 394006 Voronezh, Russia
³ Moscow State University of Civil Engineering, 129337 Moscow, Russia

^* Corresponding author: olgmina@gmail.com

Abstract

Mathematical models of integrated circuit (IC) elements are one of the foundations in energy engineering in setting and solving IC design problems. When developing an IC, its elements and the circuit itself are created simultaneously, so the IC developer’s natural desire is to use models of elements relative to structural parameters, which makes it possible to analyze and optimize the characteristics of the IC before producing trial batches. To date, a number of Metal Oxide-Semiconductor (MOS) transistor models have been developed regarding structural parameters, but their use, as a rule, does not provide acceptable analysis accuracy and in some cases leads to unnecessary computer time consumption, which is explained by their complexity. The issue of creating mathematical models of MOS transistors and IL-channels, which have found wide application in the creation of integrated circuits, is especially acute, but simple and, at the same time, sufficiently accurate mathematical models have not been created to date. Therefore, the main goal of this chapter is to conduct a comparative analysis of existing models of MOS transistors with induced and ion-doped channels and develop models that largely eliminate the shortcomings of the existing ones. The issues of determining the electrical parameters of MIS structures are also considered and experimental results of studying the accuracy of the developed models are presented.