n-AlInN/p-Si Heterojunction Solar Cell Growth by RF Sputtering via Down-Converting Layers Co-Dopedwith Tb³⁺/Yb³⁺ Rare Earth Ions

¹ Laboratory of Innovative Technologies, National School of Applied Sciences of Tangier, Abdelmalek Essaadi University, Tetouan 93000, Morocco.
² Photonics Engineering Group, University of Alcala, 28871, Alcala de Henares, Spain.

^* Corresponding author: salima.elamrani1@etu.uae.ac.ma

Abstract

Nowadays, III-nitrides are widely recognized as highly desirable semiconductors for electronic and opto-electronic devices, thanks to the distinctive properties of these materials. It is worth mentioning that aluminum-indium nitride (AlInN) alloys have become important contenders, showing great potential for photovoltaic applications. This is attributed to their broad direct bandgap energy, encompassing the solar spectrum from 0.7 eV (InN) to 6.2 eV (AlN). Furthermore, their exceptional resistance to high temperatures and resistance to high-energy particles further enhance their suitability for various technological applications. In this study, we will examine the optimization of the AlInN/Silicon heterojunction PV cell growth by the RF sputtering technique. Our approach is founded on prior investigations already conducted by our research group, which focused on down-conversion through the utilization of 70 SiO₂–30 HfO₂ glass-ceramic layers co-doped with Tb³⁺/Yb3⁺ rare earth ions to optimize the efficiency of the PV cells under investigation.