Open Access
| Issue |
E3S Web Conf.
Volume 64, 2018
2018 3rd International Conference on Power and Renewable Energy
|
|
|---|---|---|
| Article Number | 04005 | |
| Number of page(s) | 5 | |
| Section | Electrical Theory and New Technology | |
| DOI | https://doi.org/10.1051/e3sconf/20186404005 | |
| Published online | 27 November 2018 | |
- Kimoto T, Cooper J A. Fundamentals of silicon carbide technology [J]. 2014. [Google Scholar]
- B. J. Baliga, Fundamentals of Power Semiconductor Devices. New York: Springer, 2008. [Google Scholar]
- Lee J S, Chun D H, Park J H, et al. Design of a novel SiC MOSFET structure for EV inverter efficiency improvement[C]//IEEE, International Symposium on Power Semiconductor Devices & Ic’s. 2014: 281-284. [Google Scholar]
- Miao Z, Mao Y, Ngo K, et al. Package influence on the simulated performance of 1.2 kV SiC modules[C]// Wide Bandgap Power Devices and Applications. IEEE, 2015. [Google Scholar]
- Xu Y, Li H, Zheng T Q, et al. Study on the Pspice Simulation Model of SiC MOSFET base on its Datasheet[C]// Ifeec. 2015. [Google Scholar]
- Sasagawa M, Nakamura T, Inoue H, et al. A study on the high frequency operation of DC-DC converter with SiC DMOSFET[C]// Power Electronics Conference (IPEC), 2010 International. IEEE, 2010: 1946-1949 [Google Scholar]
- Xiang xiang F. Characterization and Modeling of SiC Power MOSFETs [J]. 2012. [Google Scholar]
- Anthon A, Hernandez J C, Zhang Z, et al. Switching investigations on a SiC MOSFET in a TO-247 package[C]// Industrial Electronics Society, IECON 2014-, Conference of the IEEE. IEEE, 2014. [Google Scholar]
- Xiao Y, Shah H, Chow T P, et al. Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics[C]// Applied Power Electronics Conference and Exposition, 2004. Apec ‘04. Nineteenth IEEE. 2004: 516-521 Vol.1. [Google Scholar]
- Wang J, Chung S H, Li T H. Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance [J]. IEEE Transactions on Power Electronics, 2013, 28 (1): 573-590. [CrossRef] [Google Scholar]
- Ren Y, Xu M, Zhou J, et al. Analytical loss model of power MOSFET [J]. IEEE Transactions on Power Electronics, 2006, 21 (2): 310-319. [CrossRef] [Google Scholar]
- Z. Chen, D. Boroyevich, and R. Burgos, “Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics,” in Proc. Int. Power Electron. Conf., 2010, pp. 164-169. [Google Scholar]
- Y. Q. Shen, J. Jiang, Y. Xiong, Y. Deng, and X. N. He, “Parasitic inductance effects on the switching loss measurement of power semiconductor devices,” in IEEE Int. Symp. Ind. Electron. Jul. 2006, vol. 2, pp. 847–852. [Google Scholar]
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