Open Access
E3S Web Conf.
Volume 288, 2021
International Symposium “Sustainable Energy and Power Engineering 2021” (SUSE-2021)
Article Number 01073
Number of page(s) 6
Published online 14 July 2021
  1. I. Varakin, Electrochemical capacitors for hybrid electric vehicles, 9th international seminar on double layer capacitors and similar storage: abstracts, reports, Florida, USA (1999) [Google Scholar]
  2. I. Varakin, et al., New ultracapacitors developed by the joint-stock company “ESMA” for various applications, International seminar on capacitors with a double layer and similar storage: abstracts, Dokl., Florida (1998) [Google Scholar]
  3. S. Hadzi-Jordanov, H. Angerstein-Kozlowska, M. Vikovic, B. Conway, J. Electrochem. Soc., 125, 1471 (1978) [Google Scholar]
  4. V. Shurygin, Supercapacitors, Assistants or Potential Competitors to Battery Power Supplies, Electronics: Science, Technology, Business, 3, 20–24 (2003) [Google Scholar]
  5. N. Choudhary, C. Li, J. Moore, et al, Asymmetric Supercapacitor Electrodes and Devices (2017) [Google Scholar]
  6. L. Dunyushkina, Introduction to methods of producing film electrolytes for solid oxide fuel cells. Russian Academy of Sciences, Ural Branch, Institute of High-Temperature Electrochemistry, Yekaterinburg (2015) [Google Scholar]
  7. Gwang-Hee Lee, S. Joon Kwon, Kyung-Soo Park, et al, Germanium microflower-on-nanostem as a high-performance lithium ion battery electrode, Scientific Reports, 4, 6883 (2014) [Google Scholar]
  8. G. Zakirov, I. Khaibullin, M. Zaripov, Formation of an ultrafine layer of germanium during ion bombardment, FTP, 17 (2), 232–234 (1983) [Google Scholar]
  9. M. Kumakhov, Energy losses and ion ranges in solids (BSU Publishing House, 320, 1979) [Google Scholar]
  10. M. Ibragimova, B. Khaibullin, N. Sainov, Transformation of the crystal structure of CdxHg1-xTe upon ion implantation, FTP, 27 (8), 1276–1281 (1993) [Google Scholar]
  11. A. Baranov, L.S. Smirnova (Ed.), Annealing of complex defects in irradiated semiconductors (Novosibirsk: Nauka, 224, 1979) [Google Scholar]
  12. A. Baranov, L.S. Smirnova (Ed.), Accumulation of defects and amorphization processes during bombardment of semiconductors with ions (Novosibirsk: Science, 23–60, 1979) [Google Scholar]
  13. N. Lyadov, T. Gavrilova, S. Khantimerov, et al, Pore formation in thin films of germanium upon implantation of Ge + ions, Technical Physics Letters, 46 (14) (2020) [Google Scholar]
  14. S. Margalit, Y. Nemirovsky, I. Rotstein, Electrical properties ion-implanted layers in Hg0.79Cd0.21Te, J. Appl. Phys., 50 (10), 6386–6389 (1979) [Google Scholar]
  15. A. Kolodny, J. Kidron, Properties of ion-implanted junction in mercury-cadmium-telluride, IEEE Transact. on Electr. Devices, V. ED-27, 1, 37–42 (1980) [Google Scholar]
  16. G.L. Destefanis, Ion implantation in Hg1-xCdxTe, Nucl. Instr. Meth., 209/210, 567–580 (1983) [Google Scholar]
  17. V. Vasiliev, V. Ovsyuk, N. Talipov, Thermal stability of photodiodes based on p-type CdxHg1-xTe heteroepitaxial layers, Abstracts of the Meeting “Actual problems of semiconductor photoelectronics”, Photonics-2003, Novosibirsk, 65 (2003) [Google Scholar]
  18. K. Boltar, V. Korolkov, A. Frolov, Investigation of the electrophysical characteristics of ion-implanted layers CdxHg1-xTe, VIII All-Union symp., Narrow band gap semiconductors and semimetals, Lvov, 2, 14–16 (1991) [Google Scholar]
  19. L. Van der Pauw, A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape, Philips Technical Review: Journal, 20, 220–224 (1958) [Google Scholar]
  20. S. Kozyrev, L. Vodopyanov, Formation of radiation defects in Hg0.8Cd0.2Te during ion implantation, Implantation of ions AG + FTP, 17 (5), 893–899 (1983) [Google Scholar]
  21. L. Bubulac, W. Tennant, S. Shin, et al, Ion implantation study of HgCdTe, Jap. J. Appl. Phys., 19, 495–500 (1980) [Google Scholar]
  22. N. Talipov, Physico-technological bases of doping of narrow-gap semiconductor compounds CdxHg1-xTe by radiation-thermal effects, Dissertation for the degree of Doctor of Physics and Mathematics, FGAOU “National Research Tomsk State University”, Tomsk (2015) [Google Scholar]
  23. G. Bahir, R. Kalih, Structure of ion-implanted and annealed Hg1-xCdxTe, J. Appl. Phys., 54 (6), 3129–3140 (1983) [Google Scholar]
  24. A. Voitsekhovsky, A. Kokhanenko, Distribution of profiles of radiation defects in MCT after ion implantation, Applied Physics, 4, 38–44 (2000) [Google Scholar]
  25. L. Magel, T. Sigmon, Dose rate effects in indium-implanted Hg1-xCdxTe, 86, 756–761 (1988). [Google Scholar]

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