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Cited article:

Si-Doped InAs/GaAs Quantum Dot Solar Cell with Alas Cap Layers

Dongyoung Kim, Mingchu Tang, Jiang Wu, Sabina Hatch, Yurii Maidaniuk, Vitaliy Dorogan, Yuriy I. Mazur, Gregory J. Salamo, Huiyun Liu

E3S Web Conf., 16 (2017) 16001

Published online: 2017-05-23

DOI: https://doi.org/10.1051/e3sconf/20171616001

This article has been cited by the following article(s):

Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

N. Ruiz-Marín, D.F. Reyes, L. Stanojević, T. Ben, V. Braza, A. Gallego-Carro, G. Bárcena-González, J.M. Ulloa and D. González
Applied Surface Science 573 151572 (2022)
https://doi.org/10.1016/j.apsusc.2021.151572

Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy

Abdelkader Aissat, Nabila Harchouch and Jean Pierre Vilcot
Lecture Notes in Electrical Engineering, Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy 519 250 (2019)
https://doi.org/10.1007/978-981-13-1405-6_30