| Issue |
E3S Web Conf.
Volume 237, 2021
3rd International Symposium on Architecture Research Frontiers and Ecological Environment (ARFEE 2020)
|
|
|---|---|---|
| Article Number | 02023 | |
| Number of page(s) | 4 | |
| Section | Energy Conservation and Emission Reduction, Energy Science | |
| DOI | https://doi.org/10.1051/e3sconf/202123702023 | |
| Published online | 09 February 2021 | |
Analysis of base characteristics of trench gate field termination IGBT
Wuhan Donghu University, China
* Corresponding author: author@e-mail.org
Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.
© The Authors, published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.