E3S Web Conf.
Volume 237, 20213rd International Symposium on Architecture Research Frontiers and Ecological Environment (ARFEE 2020)
|Number of page(s)||4|
|Section||Energy Conservation and Emission Reduction, Energy Science|
|Published online||09 February 2021|
Analysis of base characteristics of trench gate field termination IGBT
Wuhan Donghu University, China
* Corresponding author: firstname.lastname@example.org
Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.
© The Authors, published by EDP Sciences, 2021
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