Analysis of base characteristics of trench gate field termination IGBT

Bo Wang

doi:10.1051/e3sconf/202123702023

All issues

Volume 237 (2021)

E3S Web Conf., 237 (2021) 02023

References

Open Access

Issue		E3S Web Conf. Volume 237, 2021 3^rd International Symposium on Architecture Research Frontiers and Ecological Environment (ARFEE 2020)


Article Number		02023
Number of page(s)		4
Section		Energy Conservation and Emission Reduction, Energy Science
DOI		https://doi.org/10.1051/e3sconf/202123702023
Published online		09 February 2021

Chen Xudong, Cheng Jianbing, Teng Guobing, et al. Novel trench gate field stop IGBT with trench shorted anode[J]. Journal of Semiconductors, 2016, 37(5): 61-64. [Google Scholar]
Qin Mengliang, Li Zehong, Zhang Bo, et al. Trench gate IGBT structure with floating P region[J]. Journal of Semiconductors, 2010, 31(2):11-13. [Google Scholar]
Fu Qiang, Zhang Bo, Luo Xiaorong, et al. A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate[J]. Chinese Physics B, 2013, 22(7):1-5. [Google Scholar]
Bryant A T, Liu Liqing, Santi E, et al. Modeling of IGBT resistive and inductive turn-on behavior[J]. IEEE Transactions on Industry Application, 2008, 44(3):904-914. [Google Scholar]
Iannuzzo F, Busatto G. Physical CAD model for high voltage IGBTs based on lumped-charge approach[J]. IEEE Transactions on Power Electron, 2004, 19(4):885-893. [Google Scholar]
Udrea F, Chan S, Thomson J. Development of the next generation of insulated gate bipolar transistors based on trench technology[C]. The 27th European Solid-State Device Research Conference, 1997: 504-507. [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.

[1] Chen Xudong, Cheng Jianbing, Teng Guobing, et al. Novel trench gate field stop IGBT with trench shorted anode[J]. Journal of Semiconductors, 2016, 37(5): 61-64. [Google Scholar]

[2] Qin Mengliang, Li Zehong, Zhang Bo, et al. Trench gate IGBT structure with floating P region[J]. Journal of Semiconductors, 2010, 31(2):11-13. [Google Scholar]

[3] Fu Qiang, Zhang Bo, Luo Xiaorong, et al. A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate[J]. Chinese Physics B, 2013, 22(7):1-5. [Google Scholar]

[4] Bryant A T, Liu Liqing, Santi E, et al. Modeling of IGBT resistive and inductive turn-on behavior[J]. IEEE Transactions on Industry Application, 2008, 44(3):904-914. [Google Scholar]

[5] Iannuzzo F, Busatto G. Physical CAD model for high voltage IGBTs based on lumped-charge approach[J]. IEEE Transactions on Power Electron, 2004, 19(4):885-893. [Google Scholar]

[6] Udrea F, Chan S, Thomson J. Development of the next generation of insulated gate bipolar transistors based on trench technology[C]. The 27th European Solid-State Device Research Conference, 1997: 504-507. [Google Scholar]