E3S Web Conf.
Volume 237, 20213rd International Symposium on Architecture Research Frontiers and Ecological Environment (ARFEE 2020)
|Number of page(s)||4|
|Section||Energy Conservation and Emission Reduction, Energy Science|
|Published online||09 February 2021|
Analysis of junction capacitance characteristics of trench gate IGBT
Wuhan Donghu University, China
* Corresponding author: email@example.com
Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance during switching transient, the influence of junction capacitance should be considered. The conductive channel of trench gate structure is different from that of planar gate structure, and the analysis method of junction capacitance using planar gate structure will inevitably bring some deviation. Based on the characteristics of trench gate structure, this paper analyzes the different expressions of internal gate-drain junction capacitance in two cases according to whether the base depletion layer can be widened to cover the trench gate, and finally carries out simulation and experimental verification.
© The Authors, published by EDP Sciences, 2021
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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