Issue |
E3S Web of Conf.
Volume 401, 2023
V International Scientific Conference “Construction Mechanics, Hydraulics and Water Resources Engineering” (CONMECHYDRO - 2023)
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Article Number | 03075 | |
Number of page(s) | 6 | |
Section | Road Construction, Building Structures and Materials | |
DOI | https://doi.org/10.1051/e3sconf/202340103075 | |
Published online | 11 July 2023 |
Technology of fabrication of CDSXTe1-X solid solution on silicon substrate
1 “Tashkent Institute of Irrigation and Agricultural Mechanization Engineers” National Research University, Tashkent, Uzbekistan
2 Tashkent State Agrarian University, Tashkent, Uzbekistan
3 Tashkent State University of Economics, Tashkent, Uzbekistan
* Corresponding author: sapaevibrokhim@gmail.com
Heterojunction between Si and CdSxTe1-x have been obtained by vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si − n/ CdSxTe1-x heterostructure are calculated.
© The Authors, published by EDP Sciences, 2023
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