Issue |
E3S Web of Conf.
Volume 462, 2023
International Scientific Conference “Fundamental and Applied Scientific Research in the Development of Agriculture in the Far East” (AFE-2023)
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Article Number | 03011 | |
Number of page(s) | 8 | |
Section | Soil Science and Natural Resources Management | |
DOI | https://doi.org/10.1051/e3sconf/202346203011 | |
Published online | 12 December 2023 |
Properties of the transition layer of the structure of the schottky barrier Al-CdTe-Mo
Nawtional University of Uzbekistan, Instutute of Semiconductor Physics and Microelectronics, 100057 Tashkent, Uzbekistan
* Corresponding author: samusu@rambler.ru
The composition and morphology of the n-Al2O3 transition oxide layer at the Al-CdTe interface and the n-MoO3 oxide layer at the CdTe–Mo interface were studied in this work. The Schottky barrier was formed by depositing a polycrystalline p-CdTe layer by a gas-transport reaction in a hydrogen flow onto a Mo substrate. The Schottky barrier was obtained by vacuum deposition of an Al metal layer on the p-CdTe surface. X-ray diffraction phase analysis of the Al–p-CdTe–Mo structure made it possible to establish the real structure, which has the real structure of Al– Al2O3–p-CdTe–MoO3. Based on a scanning electron microscope (SEM), the composition of the Al-p-CdTe structure was studied, where Al is 1.7% Wt, Te is 52.3% Wt, and Cd is 46.0% Wt. The current-voltage characteristics of the Al-CdTe-Mo Schottky barrier in the forward and reverse directions have been studied. The influence of the MoO3 compound layer, which is a wide-gap semiconductor with an n-type orthorhombic structure with a band gap Eg = 2.68 eV, has been revealed. Based on the current-voltage characteristics of the structure, the n-MoO3 layer is determined by smoothing the barrier between the metal and the semiconductor, which affects the mechanism of charge transfer in the structure. The MoO3 compound is a source of electron injection, which is formed during the growth of p-CdTe between the layers of the Mo substrate and the CdTe polycrystalline film. For all samples in the spectral range 190÷900 nm, the absorption edge of Al2O3 films is not observed, which indicates a larger band gap of the oxide Eg ≥ 6.5 eV.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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